- 學位論文
超薄TSV晶圓抗彎矩強度之數值分析
A Numerical Analysis of the Flexural Strength of Thin TSV Wafer Die
摘要
近年來晶片趨向輕薄短小、低耗電、低成本與多功能的需求，故晶片在系統中可使用的空間愈來愈小，因此發展三維矽穿孔(Through Silicon Via; TSV)多晶片堆疊封裝(Stacked-Die Packaging; SDP)技術是極重要的封裝發展方向。當晶片數量增加時，必須經由減少晶片厚度來達到既有晶片堆疊的空間，而多晶片封裝若有一顆IC失效，將連帶造成整個IC無法運作，故在封裝第一階段，需應用超薄TSV晶圓之針測技術(Thin TSV Wafer Probing Techniques)，即時檢測出不良晶粒。本研究將應用四點彎矩(Four-Point Bending,4PB)模擬超薄TSV晶圓針測時所產生之晶圓強度，此外本研究建立薄板元素(Plate Element)之無限元素(Infinite element)的計算方法，並利用此分析模型結合有限元素法探討不同孔徑大小、厚度對薄晶圓強度之影響。
並列摘要
Light weight, small size, low voltage, and low cost are the mainly request of high performance IC product; on the other hand, it also means the spacing for IC system is very limited. Therefore to develop the Through Silicon Via (TSV) Stacked-Die Packaging (SDP) is the current important direction for advance packaging technique. TSV/SDP need to support with thin wafer so that the stacking dies could maintain the spacing limitation, however any failure die could lead to lower the yield rate and increasing the manufacturing cost. Therefore, a highly needed technique at the first phase of the package is to develop of ultra-thin TSV Wafer Probing Techniques for better detecting of failure dies and improve the yield rate of SDP. In this study we applied four-point bending to analyze the die strength of probing ultra-thin TSV Wafer. We also developed an analytical method, using plate element sets up infinite element Analysis (IEA) model combined with the Finite Analysis(FEA) model to analyze the size and thickness effect of TSV.