- 學位論文
新穎性p型半導體材料特性與穩定性在電子元件應用上之研究
Investigation of characteristics and stabilities of novel p-type semiconductors for electronic applications
摘要
實驗利用Au/SnO/n-type Si/In元件來分析載子的傳輸機制。由結果發現載子是蕭特基放射(普爾-弗倫凱爾放射)從閘極(基板)方向注入。這些機制與界面特性相關性很大，進一步計算SnO的介電常數差異進行觀察。結論證實了有SnSixOy的界面層存在。在眾多p型半導體元件中，新型電阻式記憶體元件利用Ag/PMMA:Na/Ag三明治結構可以被實現。藉於摻入適當比例的Na原子，由電特性觀察可以得到明顯的遲滯現象(元件記憶特性)。其中進一步分析元件的開/關比可以推得摻Na:180秒這組參數最佳，代表了載子藉由空間電荷限制電流的機制來傳導；其中摻雜太多的Na反而會有額外缺陷產生影響電特性。利用直接能隙且沉積成本較低的溶膠-凝膠來製作CuI薄膜，並且加入各種不同退火條件來進行元件的UV光響應之特性研究，結果證明了碘空位在CuI中扮演的腳色。
關鍵字
p-type半導體並列摘要
Current conduction mechanisms through Au/SnO/n-type Si/In devices were investigated. The electrical characteristics suggest that the injection behavior is governed by Schottky (Poole–Frenkel) emission for gate (substrate) injection. This injection is strong correlated with the interfacial property of devices. The discrepancy of SnO permittivity extracted respectively from Schottky and Poole–Frenkel emissions is observed and owing to the formation of intermediate SnSixOy layer. The fabrication of memory devices based on the Ag/PMMA:Na/Ag structure and their current–voltage characteristics are reported. The Ag/PMMA:Na/Ag devices show a hysteresis behavior with different Na contents. The most evident hysteresis behavior for memory effect, represented as the on/off current ratio, is found to be as high as 105in Ag/PMMA:Na-180 s/Ag devices. The carrier conduction mechanisms between the high and low resistance states and the transition states are further examined on the basis of trap-assisted space charge limited current theory. Such devices sustain at least 60 operation iterations and 100 s duration tests. Hence, the idea of incorporating Na particles into the organic layer of memory devices creates a promising direction for the development of organic memory devices. An ultraviolet photodetector based on p-CuI/n-Si heterojunction was fabricated using sol-gel growth process. The properties of the UV photoresponse under various annealing temperature and environment were investigated. The results showed that the number of iodine vacancy have a clear influence on the photocurrent magnitude by the different annealing conditions. These results demonstrate an effective approach for designing and decreasing iodine vacancy modulated fast reset UV photodetectors.