- 學位論文
一種新型低壓CMOS技術下具有消除回饋電流的升壓電荷泵方案
A Novel Boost Charge Pump Scheme with Kick-Back Current Free in Low-Voltage CMOS Technology
摘要
以往傳統式的電荷泵電路(Charge Pump Circuit)為了避免重疊時脈(Clock)的逆電流(kick-back current)問題，通常會需要特殊的時脈產生器(Clock Generator)來驅動電荷泵電路(Charge Pump Circuit)的電容，但是目前的研究都存在著逆電流(kick-back current)的問題。為了解決電荷泵電路(Charge Pump Circuit)的逆電流(kick-back current)問題，所以本研究重新設計荷泵電路(Charge Pump Circuit)架構與四相位非重疊緩衝器(Four-Phase Non-Overlap Clock)的設計。 本研究採用國家實驗研究院台灣半導體研究中心(Taiwan Semiconductor Research Institute, TSRI)提供的UMC 0.18 um Mixed-Mode and RFCMOS 1.8V/3.3V 1P6M Metal Capacitor Process，晶片尺寸1486um*1396um。並解決在本研究第一章研究動機中所探討的逆電流(kick-back current)的問題。 以本研究重新改進的電荷泵電路(Charge Pump circuit)架構與四相位非重疊緩衝器(Four-Phase Non-Overlap Clock)的架構，並經由實際晶片量測結果可得知，不論在輕載或重載(0.5mA~3.5mA)之間，本研究的升壓電路控制系統皆能調整充電頻率而且將設計的輸出電壓穩定保持在設計值之上，效率(Power Efficiency)也都符合預期的規格。顯示此本文研究中的改善設計是能有效解決逆電流(kick-back current)的問題。
並列摘要
Traditional charge pump circuit usually needs a special clock generator to drive the charge pump circuit in order to avoid the kick-back current issue, but the current research has the issue of kick-back current. In order to solve the kick-back current issue of the Charge Pump Circuit, the structure of the Charge Pump Circuit and the Four-Phase Non-Overlap Clock circuit are re-designed in this research. In this work, the chip using the UMC 0.18 um Mixed-Mode and RFCMOS 1.8V/3.3V 1P6M Metal Capacitor Process was successfully implemented and we solve the kick-back current issue discussed in the research motivation of the first chapter. Based on the improved charge pump circuit architecture of this work and the architecture of the Four-Phase Non-Overlap Clock our result is significantly better than the previous references through the actual measurement of the power efficiency of the chip, Therefore the improved design in this work can effectively solve the kick-back current issue.