摘要
本文目的在利用舊有之設備，加上改變切割方式及參數之調整，讓 4 mil 厚度(約 102 μm)以下之晶圓在切割時能獲得最佳狀態，提升生產良率，降低生產、設備成本。 當在切割 4 mil(102 μm)以下之晶圓時，需選擇黏度較大的晶圓膠帶，使得晶粒不易因震動而造成缺陷。而刀具則需要選擇軟結合劑且小顆粒鑽石顆粒之刀具，來減少刀具與晶片之摩擦與碰撞。而切割之轉速必須降低到 25000 RPM及進刀之速度必須降到 20 mm/s，這樣的切割品質最佳，這樣能減少刀具與晶圓間之撞擊力。而一般傳統切割方法，在晶粒小且薄型之產品中，無法抑制龜裂(Crack)、崩裂(Chipping)的發生，單軸兩段式切割方式配合上述參數，能得先進設備所生產出來的品質，因而可節省生產時間及新設備的成本。
並列摘要
The purposes of the research are mainly on yield improve, cost reduction and getting the optimum or best quality of the wafer (4mil in thickness) by re-using the existing equipment, changing the cutting method and adjusting the parameter of the platform. When wafer cutting under 4 mil (102 μm) of silicon wafer, Need to choose the tape of stronger viscosity, due to defects caused by vibration. The cutting tool needs to choose the soft binder and the small particles diamond can reduces friction and the collision the cutting tool and the chip. The cutter with soft binder and small grain can reduce the friction and collision, to avoid wafer damage. The cutting speed and rotational speed must reduce to 25000 RPM and 20mm/s, such cut quality is the best. This method can reduce the impact force between the cutter and the wafer. In general traditional cutting methods for the grain products of small and thin wafers, the Crack and the Chipping, can not be avoided. The single axle two section of type cutting way with the above experimental parameters, can result in the quality which the sophisticated equipment produces, thus may save the productive time and the new equipment's cost.