摻雜錫之氧化銦奈米線的合成與性質探討

Synthesis and Properties of the Tin-Doped Indium Oxide Nanowires

林良達(Liang-Da Lin) ； 張立偉(Li-Wei Chang) ； 施漢章(Han C. Shih)

《華岡工程學報》 28期 (2011/06) Pp. 125-129

https://doi.org/10.29987/CCUHKJE.201106.0019

摘要

本實驗利用熱蒸鍍法成功合成出摻雜錫之氧化銦奈米線。透過場發射掃描式電子顯微鏡（FESEM）觀察其表面形貌，再使用穿透式電子顯微鏡（TEM）以及X光繞射分析儀（XRD）分析其晶體結構和成長方向，可以發現微量摻雜錫元素並不影響主體氧化銦的結構。而使用能量散佈光譜儀（EDS）和X光光電子能譜儀（XPS）作成分的鑑定，證明氧化銦奈米線內部確實有錫摻雜。最後以電流－電壓（I-V）曲線的量測分析，發現摻雜錫之氧化銦奈米線的電阻值為30.97千歐姆。

關鍵字

熱蒸鍍法 ； 氧化銦摻雜錫 ； 奈米線

並列摘要

In this study, tin-doped indium oxide nanowires have been successfully synthesized by thermal evaporation. Using field emission scanning electron microscope (FESEM) to observe the surface morphology, and using transmission electron microscopy (TEM) and x-ray diffraction (XRD) to analyze the crystal structure and growth direction, we found that the main structure of indium oxide hardly changed when slight tin was doped in. The use of energy dispersive spectroscopy (EDS) and x-ray photoelectron spectroscopy (XPS) for the materials identification, can prove that the indium oxide nanowires are within the tin doping limit. Finally, the result of the current-voltage(I-V) measurement and analysis, yielding a resistance value of the tin-doped indium oxide is 30.97 kΩ.

並列關鍵字

thermal evaporation ； tin-doped indium oxide ； nanowires