High Brightness InGaN/GaN MQW Green Light Emitting Diodes with CART and DBR Structures

陳進祥(Chin-Hsiang Chen) ； 蘇炎坤(Yan-Kuin Su) ； 張守進(Shoou-Jinn Chang)

《光學工程》 81期 (2003/03) Pp. 18-26

https://doi.org/10.30011/OE.200303.0003

並列摘要

Distributed Bragg reflector (DBR) and charge asymmetric resonance tunneling (CART) structures were applied to nitride-based green light emitting diodes (LEDs) to enhance their output efficiency. It was found that we can reduce the forward voltage at 20mA from 3.7V to 3.2V with the inclusion of CART structure. It was also found that the electroluminescence peak wavelength of the CART LED is less sensitive to the amount of injection current. The output power and external quantum efficiency of the CART LED with DBR structure measured at 20mA can reach 7.2 mW and 11.75%, respectively.

並列關鍵字

GaN ； Green LED ； DBR ； CART ； MQW