Low Dielectric Constant Silica Films Prepared by a Templating Method

以模版法製備低介電二氧化矽薄膜的研究

丁致遠(Chih-Yuan Ting) ； 吳鎮安(Chen-An Wu) ； 萬本儒(Ben-Zu Wan) ； 吳文發(Wen-Fa Wu)

《Journal of the Chinese Institute of Chemical Engineers》 34卷2期 (2003/03) Pp. 211-217

https://doi.org/10.6967/JCICE.200303.0211

摘要

本文探討以有機物為模版，開發孔洞型二氧化矽低介電薄膜的製備程序，研究中使用了幾種可溶於矽膠體溶液之有機物（包括離子型及非離子型界面活性劑）為模版。二氧化矽薄膜孔洞的形成，是藉由鍛燒程序中，這些有機物的燒除而形成。本研究並探討製備程序中膜厚的控制及薄膜表面改質的方法。由研究結果發現，膜厚可由溶液組成，旋轉塗佈轉速及鍛燒升溫速度加以控制，但是影響膜厚的主要因素是塗佈溶液中二氧化矽前驅物TEOS(tetraethyl orthosilicate）的濃度，而旋轉塗佈轉速及鍛燒升溫速率則僅會稍許改變膜厚。另外，表面改質的目的是為使薄膜表面產生疏水性，本研究已探討了反應溫度、矽烷種類（改質劑）及濃度的效應。由研究得知以甲苯（toluene）溶液中的HMDS（1,1,1,3,3,3-hexamethyl disilazane）在80°C下對表面改質效果最佳。本研究同時也嘗試四個不同種類的模版試劑，結果發現以Tween80（polyoxyethylene(20) sorbitan monooleatel）非離子型界面活性劑所得的薄膜介電值最低，因此在未來孔洞型二氧化矽低介電薄膜的製備上，該模版之應用深具潛力。

並列摘要

He preparation of low dielectric constant porous silica films by a templating method was studied in this research, Several organic compounds (including ionic and non ionic surfactants), which can be dissolved in the coating solution, were used as the template. They were applied to make pores in the film by burning them off during calcinations in the air. TEOS (tetraethyl orthosilicate) was used as the silica source for the preparation of sol-gel. The processes that influenced the film thickness and the film surface modification were investigated. It was found from this research that the concentration of TEOS in the coating solution affected he film thickness the most. The spin speed during spin coating and the temperature increasing rate during the calcinations process only slightly influenced the thickness. The surface modification was most successful when the film was immersed in the limos (1,1,1,3,3,3hexamethyl disilazane) and toluene solution at 80°C. Moreover, for the templates tested in this research, it was found that the film using Tween 80 (polyoxyethylene(20) sorbitan monooleatel, a non-ionic surfactant) exhibited the lowest dielectric constant.

並列關鍵字

Low k materials ； Porous silica ； Spin coating ； Thin film ； Sol-gel ； Dielectric onstant