Growth Kinetics of Chemical-Vapor-Deposited Pb(Zr(subscript x)),Ti(subscript(1-x))O3 Films from a Pb(C2H5)4/Zr(O-t-C4H9)4/Ti(O-i -C3H7)4/O2 Reaction System

以四乙基鉛／四異氧丁基鋯／四異氧丙基鈦／氧爲反應系統化學氣相沉積鋯鈦酸鉛膜的反應動力之研究

鄭惟元(Wei-Yuan Cheng) ； 洪儒生(Lu-Sheng Hong)

《Journal of the Chinese Institute of Chemical Engineers》 35卷6期 (2004/11) Pp. 603-611

https://doi.org/10.6967/JCICE.200411.0603

摘要

以四乙基鉛、四異氧丁基鋯、四異氧丙基鈦與氧氣爲反應物，在773-853k的溫度範圍，藉由低壓化學氣相學沉積法，沉積鋯酸鉛膜於鍍有白金的矽基材上。藉由分析薄膜成長速率對沉積溫度與各個反應物濃度的變化，探究出鋯鈦酸鉛膜的成長反應動力。結果發現，成長速率對四乙基鉛及氧氣濃度變化呈現Langmuir-Hinshelwood的動力形式，但對四異氧丁基鋯及四異氧丙基鈦則呈現線性關係。據此，提案一Eley-Rideal的反應機制，即以兩個表面吸附物種（四乙基鉛與氧氣）與兩個直接由氣相供給的物種（四異氧丁基鋯與四異氧丙基鈦）進行反應來描述鋯鈦酸鉛薄膜的成長行爲。經由對不同沉積溫度的長膜速率變化作數值分析，求得四乙基鉛的吸附熟約爲-51.5kcal/mol，顯示四乙基鉛在此一薄膜成長程序中，具有強表面吸附的物質。

並列摘要

Lead zirconate titanate (PZT) films were deposited on Pt-coated Si substrates by means of the low-pressure chemical vapor deposition (LPCVD) technique using tetraethyl lead (Pb(C2H5)4), zirconium tert-butoxide (Zr(O-t-C4H9)4), titanium tetraisopropoxide (Ti(O-i-C3H7)4), and oxygen (O2) as reactants at temperatures ranging from 773 to 853K. The film growth kinetics was studied by investigating the growth rate dependencies at various substrate temperatures and reactant concentrations of Pb(C2H5)4, Zr(O-t-C4H9)4, Ti(O-i-C3H7)4, and O2, respectively. The film growth rate obeyed Langmuir-Hinshelwood typed kinetics with respect to Pb(C2H5)4 and 02 but increased linearly with the concentrations of the B-site precursors, i.e., Zr(O-t-C4H9)4 and Ti(O-i-C3H7)4. An Eley-Rideal mechanism that considers a surface reaction among two adsorbed species, Pb(C2H5)4 and O2, and two gaseous species, Zr(O-t-C4H9)4 and Ti(O-i-C3H7)4, was established to describe the PZT film growth behavior. Growth rate fitting with respect to the reaction temperature gave an adsorption energy of about -51.5 kcal/mol, indicating strong surface adsorption characteristic of Pb(C2H5)4 during the film growth process.

並列關鍵字

MOCVD ； PZT ； Pb(C2H5)4 ； Zr(O-t-C4H9)4 ； Ti(O-i-C3H7)4 ； Growth kinetics ； Eley-Rideal mechanism