R. F. Magnetron - Sputter Deposition of Pb(Mg1/3Nb2/3)O3 Thin Films

射頻磁控濺鍍沉積Pb(Mg1/3Nb2/3)O3薄膜

李中夏(C. H. Lee) ； 吳孟韋(M. W. Wu) ； 李英翰(Y. H. Lee) ； 李后偉(H. W. Lee)

《材料科學與工程》 34卷2期 (2002/06) Pp. 67-72

https://doi.org/10.6409/JMSE.200206.0067

摘要

本文探討射頻磁控濺鍍Pb(Mg1/3Nb2/3)O3 （簡稱PMN）薄膜在Si晶圓上的製程及其特性，實驗參數包括Ar及O2混合氣流的比例、總流量及氣壓、射頻功率、基板溫度、靶材成份及退火條件等。薄膜的特性受靶材成份、射頻功率及退火條件的影響較為顯著。為獲得高介質常數及降低漏電流密度，薄膜的微結構必須含有高量的小晶粒鈣鈦礦成份。

關鍵字

PMN薄膜 ； 磁控濺鍍 ； 鈣鈦礦晶粒 ； 介質常數

並列摘要

R. F. magnetron sputter deposition of Pb3MgNb2O9(PMN) thin films on n-type (001) Si wafers in the ambient of Ar and O2 mixture is investigated in an attempt to search for a high permittivity dielectric material for capacitor application to Dram IC. The deposition process is optimized with process parameters including reaction pressure, substrate temperature, oxygen flux and R. F. power density. The microstructure and the electrical properties of the thin films are found strongly dependent on target composition and post annealing history. In order to obtain high permittiviy and low leakage, the thin films must be treated to contain mostly perovskite phase of small grains.

並列關鍵字

PMN thin film ； RF sputter ； Permittivity ； Perovskite ； Pyrochlore