氮化鈦/氮化鋁奈米多層膜在電路板微鑽孔應用之研究

Application of TiN/AIN Nano-multilayer Films on Circuit Board Micro-drilling

姚舜暉(S. H. Yao) ； 高文顯(W. H. Kao) ； 蘇演良(Y. L. Su) ； 劉醇鴻(T. H. Liu) ； 劉伍健(W. C. Liu)

《材料科學與工程》 37卷1期 (2005/03) Pp. 8-15

https://doi.org/10.6409/JMSE.200503.0008

摘要

本研究採用一新型真空濺鍍系統製備氮化鈦/氮化鋁奈米多層膜，該濺鍍系統依最新發展之高速反應脈衝電漿物理濺鍍製程技術而設計。此濺鍍系統之特點爲濺鍍艙中同時配置非平衡磁控濺鍍與平衡磁控濺鍍兩系統，以前者濺鍍氮化鋁，而以後者濺鍍氮化鈦。本研究之目的爲經由控制濺鍍參數，以獲得具不同週期之氮化鈦/氮化鋁奈米多層膜，並探討週期對多層膜晶體結構、硬度、黏附度，與磨耗行爲之影響；最後將多層膜濺鍍於微鑽針上對電路板進行微鑽削實機測試，以驗證其實用性。
結果顯示，經由濺鍍參數之控制，可製備週期(λ)範圍2.4至67.6奈米之氮化鈦/氮化鋁多層膜。在λ≤3.6nm時，多層膜具備極高之硬度、極佳之黏附性，以及非常優越之磨耗性能表現。實機測試確認此多層膜可對微鑽削行爲提供極大之改善。

關鍵字

氮化鈦／氮化鋁奈米多層膜 ； 週期 ； 磨耗 ； 微鑽削

並列摘要

In this study, the TiN/AlN nano-multilayer films were prepared using a new sputtering setup, which was designed and manufactured on basis of a newly developed technology-the high-speed reactive pulsed-arc plasma aided physical vapor deposition. This setup featured an unbalanced magnetron sputtering system and a balanced magnetron sputtering system. The former was employed to deposit the AlN film, and the latter the TiN film. The aim of this study was to obtain, through controlling the deposition conditions, a group of TiN/AlN nano-multilayer films with various periods, and to investigate the influence of periods on the crystal structure, fundamental properties and wear behavior of the films. At last, the on-field testing of circuit board micro-drilling was conducted to approve the feasibility of the nano-multilayer film.
The results revealed that through controlling of the deposition parameters, the TiN/AlN multilayer films with periods ranging from 2.4 to 67.7 nm were obtained. At periods≤3.6nm, the films had extremely high hardness, excellent adhesion and wear performance, as compared with the traditional single-layer TiN film. The on-field testing confirmed the nano-multilayer could provide a lot of improvement in micro-drilling performance.

並列關鍵字

TiN/AlN nano-multilayer films ； period ； wear ； micro-drilling