以反應性射頻磁控濺鍍法在PET基材上製備氮化鈦薄膜與特性分析

Preparation and Characterization of Titanium Nitride Thin Film Deposited on Polyethylene Terepthalate by Reactive Radio Frequency Magnetron Sputtering

林明志(M.C. Lin) ； 張立信(L.S. Chang)

《材料科學與工程》 38卷1期 (2006/03) Pp. 56-60

https://doi.org/10.6409/JMSE.200603.0056

摘要

利用介電材料鍍膜技術來增強高分子基材對於水氣與氧氣滲透的抵抗能力。在眾多介電材料中，氮化物由於具備優異化學穩定性、熱傳導性、電絕緣性、低介電係數與低熱膨脹係數等特性，因此其介電薄膜亦廣泛用作擴散阻障層。
本研究中以反應性射頻磁控濺鍍法在PET基材上製備氮化鈦薄膜，將藉由改變製程參數，如、濺鍍功率密度及基材負偏壓，控制鍍膜速率與基材溫度，以期得到最佳品質之TiN薄膜。實驗結果顯示，當增加濺鍍功率可觀察到薄膜變的更爲緻密且晶粒大小也有隨濺鍍功率增加而增加。從FE-SEM可觀察到所沉積TiN薄膜橫截面呈現柱狀型態。而由XRD的分析得知，TiN鍍膜是爲非晶質結構。在成分分析方面，所沉積之鍍膜具有Ti、N、O及C等元素。在鍍上TiN薄膜最佳水氣滲透率與氧氣滲透率分別爲0.38 g/平方公分-day-atm及0.542 cc/平方公分-day-atm，分別爲未鍍膜前之2/25與1/54。

關鍵字

反應性磁控濺鍍 ； PET基材 ； 氮化鈦薄膜

並列摘要

The resistance against water vapor and oxygen gas permeation of polymer substrates can be improved by means of deposition techniques for dielectric thin films. Titanium nitride (TiN) is widely used as a diffusion barrier due to its excellent chemical stability, high thermal conductivity, good electrical insulation, low dielectric constant and low thermal expansion among dielectric materials. In this research, TiN thin films were prepared on polyethylene terepthalate (PET) by means of reactive radio frequency magnetron sputtering. The TiN thin film with the optimum performance was obtained by varying some process parameters including the sputtering power density and substrate bias and controlling the deposition rate and substrate temperature. The cross-sectional view showed that TiN thin films possess a columnar structure, while they have an amorphous structure determined by X-ray diffraction. It was found that the TiN film becomes denser and the columnar diameter becomes larger as the sputtering power density increases. The lowest permeation rate of water vapor for PET substrates coated with TiN thin films is 0.38 g/cm^2-day-atm and that of oxygen gas is 0.542 cc/cm^2-day-atm. These values are 2/25 and 1/54 of those for an uncoated PET substrate.

並列關鍵字

Reactive Magnetron Sputtering ； PET ； TiN