低介電常數CaO-B_2O_3-SiO_2玻璃陶瓷之特性研究

A Study of Low Dielectric Constant CaO-B_2O_3-SiO_2 Glass Ceramics

江傳宗(C. C. Chiang) ； 王錫福(S. F. Wang) ； 王玉瑞(Y. R. Wang) ； 徐永富(Y. F. Hsu)

《鑛冶：中國鑛冶工程學會會刊》 51卷4期 (2007/12) Pp. 49-57

https://doi.org/10.30069/MM.200712_51(4).0005

摘要

CaO-B_2O_3-SiO_2玻璃為重要之低溫共燒陶瓷基板系統之一，具有低材料成本及適合大量生產的優點。本文探討不同配比之CaO-B_2O_3-SiO_2系統對其燒結緻密性、顯微組織、介電特性及熱性質之影響。低溫玻璃45CaO-31.7B_2O_3-23.3SiO_2（CBS-4），其介電常數為7.2，介電損失是0.0094，其熱傳導係數為0.9 W/mK，電阻值為22.3×10^(11)Ω，熱膨脹係數為8.2 ppm /℃，CBS-4玻璃燒結後含少量SiO_2（Tridymite），主要為非晶質結構，高含量之CaO有較高的離子移動性（ionic mobility）導致介電損失增高電阻值偏低，結構緻密有利熱傳導性質。高溫玻璃10.5CaO-22.2B_2O_3-67.3SiO_2（CBS-9）具有低的介電常數（3.8），低的介電損失（0.0017），其熱傳導係數為1.1 W/mK，電阻值為25.8×1011Ω，因CBS-9玻璃燒結後亦含少量SiO_2（Quartz及Tridymite），主要為非晶質玻璃，低含量之Ca離子有較低的離子移動性故介電損失降低電阻值偏低，其結構緻密、孔洞小於5μm故有良好熱傳導性質，由於高含量之SiO_2（介電常數為3.8）故有效降低介電常數，結構中包含低膨脹係數SiO_2及非晶質玻璃，其熱膨脹係數為3.2 ppm/℃與矽之CTE相近（Si之CTE=3 ppm /℃@25～200℃），適用於基板封裝材料。影響介電特性之主要因素包含結晶相、非晶質相、離子極化率及膨脹係數等。

關鍵字

玻璃陶瓷 ； CaO-B_2O_3-SiO_2 ； 介電性質 ； 熱性質

並列摘要

The CaO-B_2O_3-SiO_2 glass is one kind of low temperature cofireable ceramics substrate with low dielectric constant, low coefficient of thermal expansion (CTE) and low cost, and is suitable for mass production. In this study, the effects of the ratio of CaO, B_2O_3, and SiO_2 on the densification, microstructure, dielectric constant, CTE, thermal conductivity, and resistance were investigated. Among the various formulations, sample with 45 mole % CaO-31.7 mole % B_2O_3-23.3 mole % SiO_2 (CBS-4) has the lowest dielectric constant (7.2), the lower dielectric losses (0.0094), the higher thermal conductivity (0.9 W/mK), the lower resistance (22.3x10^(11) Ω), and the lower CTE (8.2 ppm/℃). SiO_2 in sample CBS-4 was mainly amorphous with a small amount of tridymite. CaO-Rich sample has higher ionic mobility, bulk resistance and dielectric loss, and density which improves thermal conductivity. Sample with 10.5 mole % CaO-22.2 mole % B_2O_3-67.3 mole % SiO_2 (CBS-9) has low dielectric constant (3.8) and dielectric loss (0.0017), a thermal conductivity of 1.1W/mK, a resistance of 25.8x10^(11) Ω, and a CTE of 3.2 ppm/℃. The CTE is comparable to that of silicon (CTE=3 ppm/℃ @25~200℃). SiO_2 in sample CBS-9 was also mainly amorphous with a small amount of quartz and tridymite. CaO in the sample lowered the ionic mobility, the bulk resistance and the dielectric loss. Samples with good thermal conductivity are suitable for device package material. Furthermore, as the amount of CaO increased, the CTE, the dielectric loss and the dielectric constant of the glasses increased. It was noted that the major factors affecting the dielectric characteristics include crystallization and amorphous phases, ion polarizing rate, and coefficient of thermal expansion.

並列關鍵字

Glass Ceramics ； Substrate ； Dielectric constant ； Thermal conductivity ； Coefficient of thermal expansion