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優化鋯鈦酸鉛壓電表現之研究

Novel Optimizing Performance of Epitaxial Pb(Zr_x,Ti_(1-x))O_3

摘要


近年來,創新材料的發展蔚為趨勢,舉凡複雜性氧化物、高熵合金等多種元素組成衍生之新型物理特性,提供材料多元的功能性,然而,考量不同成長環境與樣品尺寸、基板之影響,優化元素成分比例之問題往往需要無數次實驗累積。在本研究中,結合遮罩技術與雷射剝鍍系統(Pulsed Laser Deposition, PLD),以鋯鈦酸鉛Pb(Zr_x,Ti_(1-x))O_3為例,在單一樣品上成長鈦元素、鋯元素成分梯度變化之高品質磊晶薄膜,藉由掃描式壓電顯微鏡(Piezoresponse force microscopy)量測壓電係數,搭配電容-電壓(capacitance-voltage)量測介電常數之變化,達到優化最適成分之目的。再者,在成長過程中,基板衍生之磊晶應力亦會隨著基板種類、薄膜厚度而改變,進而影響鋯鈦酸鉛薄膜之效能,因此,本研究亦選用硬質鈦酸鍶基板(SrTiO_3)與柔性雲母基板(muscovite)作為比較基準,結合遮罩技術,成長一系列厚度變化之樣品,進而了解磊晶應力對薄膜開發之影響,將有助於提升鋯鈦酸鉛薄膜應用於感測元件之潛力。

並列摘要


Recently, the evolution of novel functional materials become a new trend for next generation. Scientists consider multi-elements material as a solution to develop functional material based on well-known two or three elements material. However, seeking the best composition of the combination of multi-elements become the common barrier in every research. In our study, we combined shutter technique and pulsed laser deposition(PLD) to investigate the best composition of Pb(Zr_x,Ti_(1-x))O_3, on both flexible muscovite and SrTiO_3 substrate. The advantage of this technique involving saving a lot of time growing every composition sample and avoiding human error during the process. In this research, we used piezoresponse force microscopy to measure piezoelectric constant (d_(33)) and capacitance-voltage experiment to get the dielectric change with compositional gradient from PbTiO_3 to PbZrO_3 in specific one sample. What's more, during the fabricating process, the constraint from substrates varying with the thickness of epitaxial film as well as the kinds of substrates. Thus, we further utilized shutter technique to study the thickness dependence of performance under flexible and hard substrates. This comprehensible investigation will play a significant role in exploiting flexible sensing elements.

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