Classification of Amorphous Semiconductors: A Thermoelectrical Approach

熊慎幹(S.K. Hsiung) ； 王蓉(R. Wang)

《Chinese Journal of Physics》 15卷3期 (1977/10) Pp. 191-198

並列摘要

A classification method is proposed to readily determine whether an amorphous semiconductor is either ”soft” (chalcogenide) or ”hard” (tetrahedral) depending on its characteristics. This classification method is based on the thermoelectric approach using two parameters derived from experimental data: 1) the slope L of the linear function relating thermoelectric power to the logarithm of electric resistivity, and 2) the structural parameter A-r/k from a thermoelectric power equation. As a result, amorphous semiconductors can be classified in terms of relative ”softness” and ”hardness” based on a plot made of L and A-r/k. The applicability of this classification method for amorphous semiconductors was correlated with current band theories. This classification method also provides qualitative understandings of the effects of the preparation method and heat treatment on the structural and electrical properties. Consequently, mechanisms for the structure ordering due to heat treatment were proposed.