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Time-Resolved Raman Studies of Pulsed Laser Annealing in Si
並列摘要
We have measured the Raman intensity ratios of Stokes to anti-Stokes lines, the frequency shifts, the linewidths and the lineshape of pulsed laser excited Si under annealing conditions. Transient information are obtained by varying the probe delay using pump-probe technique. Combining the temperature-dependent resonance effects, carrier density effects, phonon anharmonicity and laser-induced strain effects, we are able to show our Raman results to be consistent with the thermal model provided a fast cooling takes place after the annealing phase which is Raman silent.
並列關鍵字
無資料延伸閱讀
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