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Time Resolved Photoreflectance of GaAs and InAlAs
並列摘要
We have measured the Schottky barrier heights of pinned and unpinned semiconductor systems by photoreflectance in terms of the Franz-Keldysh oscillations in frequency domain and the characteristic times in time domain The structure of the pinned system is δ-doped GaAs homojunctions and that of the unpinned system is InAlAs surface-intrinsic-n+ structure. In time domain, the rise and fall times were determined by digital oscilloscope. From the characteristic times obtained, we can determine the potential barrier heights for both structures. The barrier heights determined by the characteristic times for GaAs pinning system and InAlAs unpinning system are, respectively, 0.68 eV and 0.63 eV, and are in good agreement with those obtained from Franz-Keldysh oscillations.
並列關鍵字
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延伸閱讀
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