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Studies of the Temperature-Driven Flow Lines and Phase Transitions in a Two-Dimensional Si/SiGe Hole System
並列摘要
We have performed low-temperature transport experiments on a Si/SiGe hole system. The measured transverse and longitudinal conductivities ¾xy and ¾xx allow us to study the magnetic-field-induced transitions in the system. In particular, we present the first study of the temperature-driven flow lines in the ”anomalous Hall insulator” regime near a Landau level filling factor ° = 1.5. The ”anomalous” temperature-driven flow lines could be due to the unusual energy level scheme in a Si/SiGe hole system. Moreover, for 3 ＜ ° ＜ 5, there is a temperature-independent point in ½xx(B), ½xy(B), ¾xx(B), and ¾xy(B) which corresponds to a boundary of the quantum phase transition.
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