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First-Order Correction to the Semi-Infinite Electron Gas Model of the Inversion Carriers at a Semiconductor-Insulator Interface
並列摘要
The Semi-infinite Electron Gas (SEG) model in the literature is extended to explicitly include the potential energy gradient to first-order, leading to the First-Order Semi-infinite Electron Gas (FOSEG) model of this work. To study the validity of the conventional and the first-order models, the density of states and the carrier density of a triangular potential are computed by both models, and are compared with the exact solution. The field-induced state density in the conventionally forbidden bandgap can be modeled by the first-order approximation because of its explicit inclusion of the potential gradient. Comparison of the carrier density shows that, when there are enough quantum levels below the Fermi level, the first-order results match the exact solution better than the conventional model, especially at locations beyond the classical turning point associated with the Fermi energy.
並列關鍵字
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延伸閱讀
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