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High Reflectance ZnTe/ZnSe Distributed Bragg Reflector at 570 nm
並列摘要
ZnTe/ZnSe distributed Bragg reflectors with 98% reflectance were grown on GaAs (001) by molecular beam epitaxy. The center of the stop band was designed to be at 570nm. The reflectivity spectrum was simulated using the dielectric model and the matrix method in optics.
並列關鍵字
無資料被引用紀錄
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延伸閱讀
- Chang, Y. C. (2020). Single Image Reflection Removal with Edge Guidance, Reflection Classifier, and Recurrent Decomposition [master's thesis, National Chiao Tung University]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0030-1504202111234355
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- 王家聲（2016）。Out-coupling Efficiency of PVOLED Improved by Distributed Bragg Reflector〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU201602772
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