We studied the distribution of the microwave intensity along the c-axis inside a stack of Bi−2Sr2CaCu2O8+x intrinsic Josephson junctions (IJJs) by monitoring the tunneling critical current of the IJJs with varied microwave power for frequencies in the W band. The stack was microfabricated into a transmission line geometry (15 μm×0.72 μm×60 nm), with a few-hundred-nm thick Au layers deposited on top and bottom of the stack. Irradiated microwaves was found to form a standing wave-like mode along the c-axis inside the stack for frequencies above a characteristic cut-off frequency. The information on the microwave distribution in a stack of junctions may be conveniently utilized for high-frequency device applications using IJJs, such as fluxon-flow THz oscillators.