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Photocarrier-induced Reduction of the Lifetime of Acoustic Phonons in Semiconductor Superlattices
並列摘要
We present an experimental analysis of the role of the electron-phonon interaction in the lifetime of coherent longitudinal acoustic phonons in a sample based on the GaAs/AlAs superlattice structure. Sub-terahertz phonons are generated and detected through an ultrafast pump-probe technique. In order to supply with different scenarios for the electron-phonon interaction, two experimental configurations are proposed, either with a high or a nil density of photo-excited carriers in the spatial region where the phonon detection takes place. We observe a one-order-of-magnitude reduction in the phonon lifetime in the first case with respect to the second.
並列關鍵字
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