Novel Method for Cu out of Plan Orientation Control by under Ta Base Layer Substrate

Yu-Sheng Wang ； Wen-Hsi Lee ； Ying-Lang Wang ； Shih-Chieh Chang

《Chinese Journal of Physics》 50卷6期 (2012/12) Pp. 973-980

https://doi.org/10.6122/CJP.50.973

並列摘要

In a copper (Cu) dual damascene process, a tantalum (Ta)-based film is widely used as a diffusion barrier to prevent the diffusion of Cu films that may cause metal line current leakage. In this study, we found that the electroplated Cu films deposit on different Ta under layer exist different X-ray diffraction (XRD) out of plan orientation intensity ratio. Our results point out that XRD spectrum I(200)/I(111) intensity ratio of Cu films deposited on β-phase Ta substrate was 0.96 after self anneal. On the other hands, XRD spectrum I(200)/I(111) ratio of Cu films deposited on α-phase Ta substrate was 3.1 after self anneal. The Cu orientation affected by under layer Ta films can be demonstrated by lattice mismatching from TEM images.

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