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A Theoretical Investigation on the Electrical Transport Properties of a Two Dimensional Electron Gas in AlGaN/GaN Heterostructure
並列摘要
In this paper I have tried to theoretically investigate the electrical transport properties of the two dimensional electron gas of an Al_(0.3)Ga_(0.7)N/GaN heterostructure, and the most important effective parameters in the temperature-dependent behavior of the carrier mobility in the temperature range of 75 to 350 K have been studied. My analysis indicates that extrinsic scattering mechanisms, such as the ionized impurity due to interface charges and the crystal defects, have an important role in controlling the carrier mobility in this system. Also, in order to obtain good fit at high temperature, I have to change the value of the electron effective mass in this system. With this change, the polar optical scattering mechanism is dominant at high temperature.
並列關鍵字
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延伸閱讀
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