- 期刊
- OpenAccess
- Ahead-of-Print
An Investigation on the AIN Interlayer Effects on the Transport Properties of InAIN/GaN Heterostructures
並列摘要
In this paper I have tried to analyze the electrical transport properties of InAlN/GaN heterostructure without and with a 1.2 nm thick AlN interlayer, theoretically, and the most important effective parameters in controlling the temperature-dependent carrier mobility have been studied in the 77-600 K temperature range, quantitatively. My analysis indicates that by inserting a 1.2 nm thick interlayer, the mobility of the system increases, which is attributed to the reduction of alloy disorder, interface roughness, crystal defect, and ionized impurity due to the interface charges scattering mechanisms. Also, the obtained results show that the interface roughness and alloy disorder scattering mechanism have a strong effect on the carrier mobility especially at low temperatures.
並列關鍵字
無資料被引用紀錄
延伸閱讀
- Amirabbasi, M., & Eshghi, H. (2015). An Investigation on the AlN Interlayer Effects on the Electrical Transport Properties of InAlN/GaN Heterostructures. Chinese Journal of Physics, 53(1), 020802-1-10. https://doi.org/10.6122/CJP.20141103A
- 王子豪（2012）。GaN-based high electron mobility transistors and photodetectors with the intermediate layer〔碩士論文，崑山科技大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0025-2208201214301900
- Huang, S. C. (2014). The Growth of AlGaN/GaN Heterostructures on SiC Substrate by MOCVD for High Electron Mobility Transistor Applications [master's thesis, National Chiao Tung University]. Airiti Library. https://doi.org/10.6842/NCTU.2014.00020
- SACCONI, F., SALA, F. D., CARLO, A. D., & LUGLI, P. (2001). Microscopic Modeling of GaN-based Heterostructures. VLSI Design, 2001(), 387-391. https://doi.org/10.1155/2001/47013
- Wu, K. T. (2005). Electrical transport in AlGaN/GaN heterostructures [master's thesis, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2005.01223