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Microwave Crystallization of Silicon Film Using Graphite Susceptor
本文正式版本已出版，請見：10.6122/CJP.20141215B
並列摘要
This study demonstrates that an amorphous silicon (a-Si) film sandwiched between two graphite layers can be crystallized on a Pyrex substrate using microwaves. The processing power is low, ranging from 300 to 500 Watts and the processing time is short, just 600 seconds. The outer and inner graphite layers which served as susceptors both disappeared after crystallization. This unexpected but beneficial phenomenon is examined carefully. Raman spectroscopy and X-ray diffraction were used to identify the evolution of crystallization at various processing times. In addition the crystallized poly-Si film with pattern was examined. The results of this study facilitate the development of multilayer patterned applications.
並列關鍵字
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