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Full Potential Calculation of the Band-Gaps in GaP/GaN Superlattices
本文正式版本已出版，請見：10.6122/CJP.20140526A
並列摘要
The present paper deals with the electronic properties of GaP and GaN zinc-blende/zincblende superlattices using the plane wave version of the full potential linear muffin-tin orbital (FPLMTO) method, which allows an accurate treatment of the interstitial regions. It is found that bowing, which is known to occur for ternary GaPN dilute nitrides, is absent from GaP/GaN 〞dilute nitride〞 superlattices with N concentrations greater than 7%, but it can be obtained in these same superlattices for high nitride concentrations.
並列關鍵字
無資料被引用紀錄
陳伯昇（2010）。含雙氧配位基Biphen 之鎂、鋁及鋅錯合物之
合成、鑑定及其於開環聚合反應之催化研究〔碩士論文，中原大學〕。華藝線上圖書館。https://doi.org/10.6840/cycu201000406
張恒嘉（2006）。以溶凝膠法製備氧化鋅奈米粉末及透明薄膜〔碩士論文，國立虎尾科技大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0028-1501201314421149
延伸閱讀
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