n-型(100)矽單晶的光電化學腐蝕研究

Photo-Electrochemical Corrosion on the n-type (100) Silicon Single Crystal

林景崎(J. C. Lin) ； 蔡志昌(C. C. Tsai) ； 蕭文助(W. C. Hsiao) ； 賴建銘(C. M. Lai) ； 黃戎嚴(Z. Y. Huang)

《防蝕工程》 16卷3期 (2002/09) Pp. 209-218

https://doi.org/10.6376/JCCE.200209.0209

摘要

本論文以光電化學方法，在n-型(100)單晶矽上蝕刻獲得均勻之微米級孔洞。研究方法採用直流電陽極動態極化法，在氟化物溶液中，探討添加劑、照光強度等參數對n-型(100)單晶矽的陽極極化曲線的影響，進而在各種蝕刻液中找出最佳蝕刻參數。
動態陽極極化研究結果顯示：n-型(100)單晶矽試片在照光環境下，於C及D蝕刻液中均可得到較快的腐蝕速率。而定電位蝕刻研究結果則顯示：孔洞生成速率以C蝕刻液最為快速，D蝕刻液其次，但使用D蝕刻液所蝕刻出孔洞壁表面形態較平滑且均勻。

關鍵字

光電化學蝕刻 ； 微孔洞 ； 動態陽極極化分析

並列摘要

Photo-electrochemical etching of n-type (100) silicon single crystal in fluoride solution has been investigated. The etching rate of the silicon is enhanced in fluoride solution (aM) by addition of cM CC01. The etching rate is accelerated in the presence of UV-visible light. Anodic polarization of the photo-electrochemical system etched in fluoride solution demonstrated that the etching rate is affected by various additives. The etching rate of the n-type Si(100) in solution C(containing aM HF+cM CC01)is faster than that in any other solutions(A、B、D and E). The pores etched in solution D (aM HF+dM CC02) show smooth morphology even the etching rate is slightly slower than in solution C.

並列關鍵字

photo-electrochemical etching ； anodic-polarization ； macro-pores