在氟化銨中以光電化學法蝕刻n-Si(100)單晶表面製作微米溝槽

Preparation of Macro Trenches on Si(100) by Photo-electrochemical Etching in Ammonium Fluoride Solution

林景崎(J. C. Lin) ； 陳韋旭(W. S. Chen) ； 賴建銘(C. M. Lai) ； 楊仁泓(J. H. Young) ； 鄭文達(W. D. Jheng) ； 蔡明蒔(M. S. Tsai)

《防蝕工程》 20卷4期 (2006/12) Pp. 353-362

https://doi.org/10.6376/JCCE.200612.0353

摘要

本研究以光電化學法在在n-型(100)矽單晶上，採用不具毒性的氟化銨蝕刻液，蝕刻出微米級溝槽結構。陽極極化法及定電位蝕刻可以用來探討氟化銨溶液中，外加電壓與試片圖案間距對蝕刻速率及蝕刻形貌的影響。研究結果顯示：在預蝕刻圖形問距為110µm，若改變蝕刻電位由0.1V增加到0.8V，則蝕刻所得之結構其孔壁厚度由32µm增加至90µm。在外加電位為0.8V時，若改變預蝕刻圖形間距在60~170µm範圍，則間距60、80及110µm試片可以製作出孔壁筆直之溝槽結構，但間距140及170µm試片，蝕刻孔洞發生擴孔，此現象之差異可由電場與空間電荷區分佈之差異來解釋。

關鍵字

n-型Si100單晶 ； 光電化學蝕刻 ； 氟化銨

並列摘要

Fabrication of macro-trenches on n-type silicon in the ammonium fluoride solution by photo-electrochemical etching has been investigated in this work. Effect of applied voltage and the pitch of pores were discussed in ammonium fluoride solution by dc-potentiodynamic polarization and potentiostatic etching. For the pattern with a pitch of 110µm, the wall width of the etching structures increases from 32µm to 90µm when the etching voltage increases from 0.1 V to 0.8 V. For the etching conducted at 0.8 V, we obtained trenches in vertical walls as the pattern with a pitch less than 110µm (e.g., 60, 80 and 110µm) but in curved walls for the pattern with a pitch higher than 110µm (e.g., 140 and 170µm). This difference in trench morphology is delineated by different distribution for the strength of electric field and the space charge regions.

並列關鍵字

n-type100 silicon ； Photo-electrochemical etching ； Ammonium fluoride