條狀藍寶石基板橫向磊晶之氮化銦鎵/氮化鎵多層量子井發光二極體

Lateral Epitaxial Patterned Sapphire InGaN/GaN MQW LEDs

許育賓(Y. P. Hsu)

《真空科技》 17卷2期 (2004/09) Pp. 39-44

https://doi.org/10.29808/JVSROC.200409.0007

摘要

以一條狀藍寶石基板(PSS)與一傳統藍寶石基板兩種不同基板來成長氮化鎵磊晶層與氮化銦鎵/氮化鎵多層量子井(MQW)藍光發光二極體。掃描式電子顯微鏡(SEM)條狀藍寶石基板氮化鎵磊晶層的顯微相片，可以發現橫向成長確實有產生，而且橫向對縱向的成長速率比約為2。也發現藉由條狀藍寶石基板橫向磊晶法(LEPS)，可以提升發光二極體的輸出功率。如此的改善可歸因於在橫向長磊晶層的區域缺陷密度減少造成的結果。

關鍵字

條狀藍寶石基板 ； 橫向成長 ； 缺陷 ； 發光二極體 ； 氮化銦鎵/氮化鎵 ； 多層量子井

並列摘要

GaN epitaxial layers and InGaN/GaN multiquantum well (MQW) blue light emitting diodes (LEDs) were prepared on both patterned sapphire substrates (PSS) and conventional sapphire substrates. From scanning electron microscopy (SEM) micrographs of GaN epitaxial layers on PSS, it was found that lateral growth indeed occurred and the lateral to vertical growth rate ratio was around 2. It was also found that we could enhance the LED output power by using lateral epitaxial patterned sapphire (LEPS). Such an enhancement could be attributed to the reduce dislocation density in the lateral growth regions of the epitaxial layers.

並列關鍵字

patterned sapphire ； lateral growth ； dislocation ； LED ； InGaN/GaN ； MQW