以非對稱電荷共振穿透結構及布拉格反射鏡結構製作高效率氮化銦鎵/氮化鎵多重量子井綠光發光二極體

The Fabrication of High Efficiency InGaN/GaN MQW Green Light Emitting Diodes with Charge Asymmetric Resonance Tunneling and Distributed Bragg Reflector Structures

陳進祥(Chin-Hsiang Chen)

《真空科技》 17卷2期 (2004/09) Pp. 55-61

https://doi.org/10.29808/JVSROC.200409.0010

摘要

在此篇論文中，我們使用布拉格反射鏡(DBR)及非對稱電荷共振穿透結構(CART)增強氮化物系列綠光發光二極體的發光效率。由實驗結果發現使用非對稱電荷共振穿透結構可將20mA的偏壓從3.7V降低到3.2V，同時降低電激發光的峰值波長對注入電流的敏感度。在20mA的注入電流下，具備非對稱電荷共振穿透結構及布拉格反射鏡的發光二極體其輸出功率及外在量子效率可達到7.2mW及11.25%。

關鍵字

氮化鎵 ； 綠光發光二極體 ； 布拉格反射鏡 ； 非對稱電荷共振穿透結構 ； 多重量子井

並列摘要

In this thesis, distributed Bragg reflector (DBR) and charge asymmetric resonance tunneling (CART) structures were applied to nitride-based green light emitting diodes (LEDs) to enhance their output efficiency. It was found that we can reduce the forward voltage at 20mA from 3.7V to 3.2V with the inclusion of CART structure. It was also found that the electroluminescence peak wavelength of the CART LED is less sensitive to the amount of injection current. The output power and external quantum efficiency of the CART LED with DBR structure measured at 20 mA can reach 7.2mW and 11.25%, respectively.

並列關鍵字

GaN ； Green LED ； DBR ； CART ； MQW