以光激化學氣相沉積系統成長二氧化矽作爲砷化鎵金氧半電容之絕緣層

GaAs MOS Capacitors with Photo-CVD SiO2 Insulator Layers

張守進(S.J. Chang) ； 林天坤(T.K. Lin)

《真空科技》 17卷3期 (2004/11) Pp. 26-30

https://doi.org/10.29808/JVSROC.200411.0005

摘要

二氧化矽薄膜成功地成長於n型砷化鎵基板上藉由光激化學氣相沉積使用氘燈作爲激發光源，在外加1MV/cm之電場下，我們發現二氧化矽薄膜之電容漏流密度於剛沉積完與400℃回火絕緣層兩種情形下分別爲1.74×10^(-6)與1.97×10^(-7) A/cm^2，另外我們也發現研製之鋁／二氧化矽／砷化鎵金氧半場效電晶體(MOSFETs)電容之介面狀態密度(D(下標 it))是很小的。

關鍵字

砷化鎵 ； 光激化學氣相沉積 ； 二氧化矽

並列摘要

SiO2 films were successfully deposited onto n-GaAs substrates by photo-chemical vapor deposition (photo-CVD) using a deuterium (D2) lamp as the excitation source. With a 1 MV/cm applied electric field, it was found that the SiO2 films leakage current densities were 1.74×10^(-6) and 1.97×10^(-7) A/cm^2, respectively, for the capacitors with as-deposition and 400℃ annealed insulator layers. The interface state densities, D(subscript it), were also found to be small for the fabricated A1/photo-CVD-SiO2/GaAs metal-oxide-semiconductor field effect transistors (MOSFETs) capacitors.