The Improvement of ITO Film with High Work Function on OLED Applications

Ping-Wei Tzeng ； C.-Y. Chen ； Jyh-Jier Ho ； Shun-Hsyung Chang ； Tsung-Hsin Chen ； Tung-Jung Wu

《真空科技》 18卷1期 (2005/02) Pp. 35-39

https://doi.org/10.29808/JVSROC.200502.0009

並列摘要

We have successful implement a new way to adjust the work function of indium tin oxide (ITO), which is proved to be a stable way since it only concerns to the partial pressure of the controllable purging gases. With this new method, the work function can increase for more than 0.3eV. Consider the ordinary ionization potential (IP) of the hole transportation layer which is from 5.35 to 5.8eV the increase of ITO work function can reduce the barrier from 40% to 70%.