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Photoluminescence Spectral Features of CdTe on InSb Grown by Molecular Beam Epitaxy

並列摘要


CdTe is an important optoelectronic material in the IR range application. CdTe was grown on InSb(001) by molecular beam expitaxy (MBE). Low temperature (2K) photoluminescence (PL) spectra were measured at c4fferent excitation power level while laser beam was focused on the same spot of the sample. From our experiment, we can obtain that the spectral features in the 1.4-1.5 eV range consist of three sets of DAP recombination emissions with different values of Huang-Rhys constants. Their peak positions are shifted with the excitation power at different rates. As expected, the Huang-Rhys factor is larger for the broadband feature than other two processes, i.e. this DAP transition involves c4fferent mechanisms from the two others.

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被引用紀錄


Lin, C. T. (2008). 零維至準二維奈米碳-其模板合成及鑑定 [doctoral dissertation, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2008.00066
Butler, C. J. (2015). Rashba半導體碘碲化鉍及溴碲化鉍之表面電子結構研究 [doctoral dissertation, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2015.10410
Chien, J. F. (2013). 利用遠程電漿原子層摻雜技術製作摻雜氮之氧化鋅薄膜及發光二極體之研究 [doctoral dissertation, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2013.03110
Muljadi, B. P. (2012). 量子統計稀薄氣體直接解法研究 [doctoral dissertation, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2012.10923
張智堯(2010)。聚苯乙烯/銀之複合材料之製備〔碩士論文,國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2010.01849

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