- 期刊
Heteroepitaxial ZnO Films Grown by Plasma-assisted Molecular Beam Epitaxy
並列摘要
Heteroepitaxial ZnO films were grown on GaN templates by plasma-assisted molecular beam epitaxy. The epitaxial GaN templates were deposited by metalorganic chemical vapor deposition on c-plane sapphire substrates. Photoluminescence spectra of ZnO epilayers excited by a He-Cd laser exhibit exciton emission at 376 nm with a full width at half maximum (FWHM) of 10 nm (90 meV) at room temperature. The exciton emission intensity of stoichiometric condition is 2 times greater than that of O-rich and Zn-rich conditions. Samples grown under stoichiometric and Zn-rich conditions do not exhibit defect-related green luminescence, but samples grown under O-rich condition do. In these heteroepitaxial ZnO layers there exists interstitial Zn and Zn vacancies. X-ray diffraction measurements revealed that there exists a residual compressive strain, ε~-0.2%, in the [0002] direction of the ZnO epilayer. The residual strain might be attributed to grain boundaries of ZnO.
並列關鍵字
無資料延伸閱讀
- 林彥丞（2004）。Atomic Flat ZnSe Epilayer Grown by Molecular Beam Epitaxy〔碩士論文，中原大學〕。華藝線上圖書館。https://doi.org/10.6840/cycu200400089
- Tsai, S. H. (2009). GaN Thin Films and Nanorods Grown by Radio-Frequency Plasma Assisted Molecular Beam Epitaxy [master's thesis, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2009.00363
- 蔡育軒（2014）。Investigating epitaxial growth of Cd-based thin films by molecular beam epitaxy〔博士論文，中原大學〕。華藝線上圖書館。https://doi.org/10.6840/cycu201400949
- 吳長修（2007）。Physical properties of ZnO epilayers grown on c-Al2O3 using plasma assisted molecular beam epitaxy〔碩士論文，中原大學〕。華藝線上圖書館。https://doi.org/10.6840/cycu200700390
- Chen, C. Y. (2013). Molecular beam epitaxial growth and characterization of zinc oxide-based materials [doctoral dissertation, National Central University]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0031-0605201417532882