- 期刊
Passivated the Surface of GaAs Photodetectors Using the Photoelectrochemical Oxidation Method
並列摘要
To improve the stability of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we directly grow the oxide of semiconductor between the interdigital electrodes of MSM-PDs for a passivation layer using the photoelectronchemical oxidation method. The dark currents of passivated MSMI (with a In0.5(Al0.66 Ga0.34)0.5P capping layer) and MSM2 (without a capping layer) were lower than for unpassivated devices, for all applied voltages. The breakdown voltage of the oxide passivated MSM1 was 52.55 V and the unpassivated MSMI was 42.5V. It can also reduce the surface states to improve the rejection ratio of MSM-PDs.
延伸閱讀
- 林郁竣（2015）。The study of pentacene-based ultraviolet phototransistors with a stacked dielectric layer〔碩士論文，義守大學〕。華藝線上圖書館。https://doi.org/10.6343/ISU.2015.00267
- 歐彥志（2008）。Fabrication and Analysis of Photonic Crystal Microcavities Embedded with Quantum Dots〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2008.01609
- 王靖雯（2011）。Photodetectors Fabricated by Standard CMOS Technology in 850 nm wavelength〔碩士論文，國立中央大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0031-1903201314423208
- Lee, C. C., & Yoo, B. S. (1990). The Origin of Persistent Photoconductivity in Hydrogenated Amorphous Silicon. Chinese Journal of Physics, 28(1), 93-103. https://www.airitilibrary.com/Article/Detail?DocID=05779073-199002-201302260001-201302260001-93-103
- Chang, S. J. (2005). Improving In0.37Ga0.63N MSM Photodetectors by Using a Recessed-Electrode Structure. 科學與工程技術期刊, 1(1), 1-4. https://doi.org/10.7117/JSET.200506.0001