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Electrical Characteristic and Microstructure of Ternary Alloy Ta(subscript x)Co(subscript y)N(subscript z) Thin Films Deposited by Reactive Sputtering

並列摘要


Reactive magnetron sputtering by using Ta-Co target under Ar/N2 mixtures were used to prepare Ta(subscript x)Co(subscript y)N(subscript z) thin films on silicon substrates. This work examined the deposition nitrogen partial pressure depend on crystal structure, surface morphology and electrical properties of the films by using X-ray diffractometry, electron microscopy, and four-point probe measurement after rapid thermal annealing the deposited films at an elevate temperature. The findings indicated that the nitrogen content monotonic increases from 46.4 to 48.6 at.% as the nitrogen flow ratio varies from 2.5 to 5000 and the thermal drive out of the nitrogen atoms in tantalum nitrides.

被引用紀錄


蔡虹驛(2014)。利用氧化鋅奈米柱/氧化銀薄膜之核殼異質結構提升光催化活性〔碩士論文,國立清華大學〕。華藝線上圖書館。https://doi.org/10.6843/NTHU.2014.00358
Chang, W. H. (2014). 整合型微流體系統平台於分子診斷技術之應用 [doctoral dissertation, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2014.00212
Liao, Y. K. (2014). 奈米結構銅銦鎵硒太陽能電池之研究 [doctoral dissertation, National Chiao Tung University]. Airiti Library. https://doi.org/10.6842/NCTU.2014.01122
陳柏源(2012)。β相穩定元素與熱處理製程對α+β鈦合金機械性質與顯微組織之影響〔博士論文,國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2012.00676

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