熱離化輔助直流磁控濺鍍氧化銦錫薄膜的光學與電氣特性之研究

氧化銦錫(Indium tin oxide, ITO)被覆於可撓軟性基板不但極具市場競爭力且爲日前顯示器發展的重點。但可撓軟性高分子基板的熱抵抗能力差，無法藉由加熱的手段來獲得高導電性與高光穿透度的薄膜。因此本研究嘗試利用熱離化輔助直流磁控濺鍍ITO薄膜，藉此提高電漿密度，在電漿離子轟擊效應增強的生長條件下，促進薄膜結晶相的形成，以期能低溫化生長高品質ITO薄膜。實驗結果顯示：熱離化輔助手段有助於薄膜的結晶化生長，結晶化溫度從無熱離化的200℃降爲有熱離化的130℃。反映在薄膜光學特性上的差異，從無熱離化所得鍍膜的平均光學穿透度48%提升到有熱離化所得鍍膜的80%。在電氣特性上也因爲薄膜的電子遷移率的提升，從無熱離化所得鍍膜的電阻率27×10^(-4)-cm降低到有熱離化所得鍍膜的5.8×10(-4)-cm。說明了使用熱離化輔助直流磁控濺鍍ITO薄膜可低溫沉積具結晶相的薄膜，且對光學及電氣特性有明顯的助益。

關鍵字

氧化銦錫薄膜；熱離化輔助；直流磁控濺鍍

並列摘要

The polymeric materials as alternatives to glass substrates have been considered due to their light-weight and device flexibility. As is well known, polymeric materials exhibit low glass transition temperatures and poor thermal endurance, making ITO coating work a great challenge. Attempts to use conventional sputter deposition techniques to achieve high-quality film deposition while keeping a low substrate temperature have not been practical. Therefore a hot filament system was coupled to a DC magnetron sputtering system capable of generating thermoelectron and contributing to the intensified glow discharge that provides additional energy input to enhance high degree crystallinic indium tin oxide (ITO) thin films grownth onto glass substrates at low substrate temperatures. Experimental results show that the films deposited with thermoelectron emission (TE) have a higher degree of crystallinity than the films deposited without TE. ITO thin films deposited on glass with TE exhibit an average visible transmittance of 80% and an electrical resistivity of 5.8×10^(-4)-cm, while films made without TE present with 48% visible transmittance and an electrical resistivity of 27×10^(-4)-cm. This study indicates that the ITO film deposition using TE improves degree of crystallinity and brings a lower electrical resistivity without sacrificing film transmittance at lower substrate temperature.

並列關鍵字

ITO thin films ； thermionic emission enhancement ； DC magnetron sputtering

國際替代計量

熱離化輔助直流磁控濺鍍氧化銦錫薄膜的光學與電氣特性之研究

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