氧氣氛與厚度對雷射鍍膜沉積之氧化鋅磊晶薄膜初始成長狀態之影響

Oxygen Pressure and Thickness Effect on ZnO Epilayers on c-Sapphire by Pulsed Laser Deposition

林伯融(Po-Rung Lin) ； 傅于娟(Yu-Chuan Fu) ； 劉淑萍(Shu-Ping Liu) ； 武東星(Dong-Sing Wu) ； 洪瑞華(Ray-Hua Horng)

《真空科技》 23卷1期 (2010/03) Pp. 33-38

https://doi.org/10.29808/JVSROC.201003.0006

摘要

利用脈衝雷射鍍膜系統在氧化鋁(001)基板上成長氧化鋅磊晶薄膜，並經由氧氣調節腔體壓力研究對氧化鋅磊晶薄膜初始成長狀態的影響。在1~40mtorr條件下成長氧化鋅磊晶薄膜，經由X光繞射儀檢測可發現，高濃度氧氣氛下成長氧化鋅會使磊晶薄膜晶體容易鬆弛。在1mtorr氧腔壓下成長氧化鋅，氧化鋅磊晶薄膜(8.7nm)與氧化鋁基板具有高度的晶體契合關係，因而使氧化鋅晶格產生水平壓應力，使得氧化鋅磊晶薄膜沿c軸受到拉伸應力。隨者氧化鋅磊晶薄膜厚度增加到13.3nm，經由氧化鋅(002)搖擺曲線可知氧化鋅晶體因高度應變累積的關係已產生部分鬆弛，當厚度增加到114nm時，氧化鋅磊晶膜晶體完全鬆弛其c軸晶格常數與氧化鋅塊材相等。

關鍵字

脈衝雷射沉積 ； 氧化鋅 ； X光繞射 ； 倒置空間圖

並列摘要

Pulsed laser deposition of ZnO epitaxial films was investigated through controlling the growth oxygen pressure (1~40 mtorr) and thickness. With increasing the oxygen pressure, the c-axis lattice constant of ZnO epilayer becomes shorter form 0.527 to 0.523 nm and approaches ZnO block value of 0.521 nm. The ZnO epilayer with 8.7 nm thickness grown at 1 mtorr shows a lattice strain property (ε=1.4%) along the c-axis. With increasing the thickness to 13.3 nm, the ZnO epilayer relaxes gradually because of the driving force of high strain due to the thickness effect the. Further increasing the epilayer thickness to 114 nm, the ZnO epilayer appears fully relaxation, where the c-axis lattice constant shows the same with the ZnO block.

並列關鍵字

Pulsed Laser Deposition ； ZnO ； X-ray ； Diffraction ； Reciprocal Space Mapping