五環素沉積於有無氧電漿處理之氧化銦錫的歐姆接觸特性分析

Pentacene Ohmic Contact on Indium Tin Oxide Surfaces with and without Oxygen Plasma Treatment

曾建洲(Jian-Jhou Zeng) ； 朱建安(Jian-An Chu) ； 林祐仲(Yow-Jon Lin)

《真空科技》 23卷2期 (2010/06) Pp. 20-25

https://doi.org/10.29808/JVSROC.201006.0004

摘要

本研究探討利用氧電漿處理氧化銦錫(ITO)薄膜表面後對五環素(Pentacene)歐姆接觸的影響。實驗中利用傳輸線模型(Transfer Mength Lethod)求出特徵接觸電阻，並使用光譜法和電特性量測法觀測五環素／經氧電漿處理氧化銦錫以及五環素／未經氧電漿處理氧化銦錫的光電特性。實驗結果顯示，氧化銦錫經氧電漿處理後會導致五環素／氧化銦錫界面處的五環素層和氧化銦錫表面吸附的氧離子結合［即產生自我摻雜(Self-doping)效應］，而使近界面處之五環素導電率升高進而降低界面接觸電阻。

關鍵字

氧化銦錫 ； X光光電子能譜儀 ； 界面 ； 真空蒸鍍

並列摘要

The influence of oxygen plasma treatment on pentacene ohmic contact on indium tin oxide (ITO) was investigated in this study. The specific contact resistance (ρ(subscript c)) was studied by the transfer length method. Spectroscopic methods and electrical conductivity measurements were used to characterize the pentacene/ITO with and without oxygen plasma treatment. The authors found that oxygen plasma treatment could lead to the incorporation of oxygen in pentacene near the pentacene/ITO interface (that is, the self-doping effect), resulting in the heightened conductivity of pentacene and a reduction in the ρ(subscript c) at the interface.

並列關鍵字

Indium tin oxide ； X-ray photoelectron spectroscopy ； Interfaces ； Vacuum evaporation