銅基板石墨烯的轉印參數影響探討

Study of the Transfer of CVD Graphene Grown on Copper

江博穗(Bo-Suei Chiang) ； 謝雅萍(Ya-Ping Hsieh) ； 陳新峵(Shin-Hong Chen)

《真空科技》 26卷2期 (2013/06) Pp. 35-42

摘要

由於石墨烯生長於觸媒表面，若要應用石墨烯在光電元件上，必須經過轉印，才能將石墨烯轉到其他基板上，因此轉印技術的發展對於化學氣相沉積生長的石墨烯在光電元件上的應用是個絕對的關鍵。然而，傳統的聚甲基丙烯（PMMA）轉印方法參數在在各個文獻中均不相同。因此，本文主要探討不同轉印參數對石墨烯轉印結果的電性影響，期許找出轉印的極佳化參數。實驗發現，若欲保持石墨烯的高載子遷移率，影響最大的石墨烯轉印參數為PMMA的烤乾溫度，及PMMA移除時丙酮的溫度。最後，極佳化後的參數和原來的參數作比較，我們證實了新參數的較高的載子遷移率及轉印穩定度。

關鍵字

轉印 ； 載子遷移率 ； 化學氣相沉積法 ； 片電阻

並列摘要

Graphene has been heralded as a revolutionary material for optoelectronic devices. Especially the synthesis of graphene through chemical vapor deposition (CVD) has the potential to produce large scale, high quality material. In order to use thus generated graphene, it has to be transferred from its growth substrate to a suitable target. Reported process parameters used for this step vary significantly and no comprehensive attempt at optimization has been undertaken. In this article, the effect of different transfer parameters on the transfer results was studied. Through Raman and electrical measurements changes to the graphene quality could be analyzed. It is found that the most important parameter is the baking temperature of PMMA and the acetone temperature during PMMA removal. A higher mobility and improved reliability of graphene devices emphasize the importance of our work.

並列關鍵字

Transfer ； Mobility ； CVD ； Sheet Resistance ； PMMA