- 期刊
可撓性P型氧化亞錫薄膜電晶體
Flexible P-Type Tin Monoxide Thin-Film Transistors
摘要
氧化物薄膜電晶體因特性優異且可低溫沉積與製作，成為下世代可撓性電子發展中極具潛力的技術，然而目前多數氧化物薄膜電晶體僅具N型操作模式，為發展低耗能之互補式電路，P型氧化物薄膜電晶體技術之研究成為關鍵所在。本研究以反應式射頻磁控濺鍍技術於聚醯亞胺基板上開發特性良好之P型氧化亞錫薄膜電晶體。研究中利用低掠角X光繞射分析，發現濺鍍製程中氧氣/(氬氣+氧氣)流量比為3.9% 時，薄膜的結晶優選方位為(110)且具最大晶粒粒徑，所製作之可撓性P型氧化亞錫薄膜電晶體亦具最佳元件特性。其場效載子遷移率為0.22 cm^2V^(-1)s^(-1)，臨界電壓為2.14 V，次臨界擺幅為2.24 V/dec，電流開關比達1.61×10^4。此外，在張應力彎曲疲勞測試中發現隨著彎曲次數增加元件載子遷移率有下降趨勢。
並列摘要
Oxide thin-film transistors (TFTs), possessing features such as high carrier mobility and lowtemperature process compatibility, have become potential candidates for the implementation of flexible electronics. Although numerous high-performance oxide TFTs have been reported, most of them are capable of only n-channel operation. To realize a versatile circuit with low power consumption, a complementary circuit is highly desirable, indicating that the development of p-type oxide TFTs is crucial. In this work, inverted-staggered bottom-gate p-type tin monoxide (SnO) TFTs with satisfactory performance are successfully demonstrated on 50-μm-thick DuPont^(TM) Kapton^® 200E polyimide foil substrates. The SnO thin film is deposited by reactive RF magnetron sputtering at low substrate temperature. The grazing incidence X-ray diffraction pattern reveals that a preferred orientation of (110) with largest grain size can be obtained when the SnO thin film is deposited at an O_2/(Ar+O_2) flow rate ratio of 3.9%. The flexible SnO TFT exhibits a field-effect mobility of 0.22 cm^2V^(-1)s^(-1), threshold voltage of 2.14 V, subthreshold swing of 2.24 V/dec, and on/off current ratio of 1.61×10^4. Its mechanical durability is further investigated by an outward-bending fatigue test. Degradation of the field-effect mobility is observed when the number of bending cycle increases. This phenomenon must be taken into account for future circuit design.