溶液剪切塗佈技術應用於高分子場效應電晶體

Solution Sheared Polymer-Based Field-Effect Transistors

郭東岳 ； 蔡宜倍 ； 余庭鳳 ； 李文亞

《真空科技》 30卷4期 (2017/12) Pp. 46-1-46-7

摘要

在下個世代的電子元件，有機高分子半導體扮演一個相當有潛力的材料可以應用在電子元件之主動層，因為除了具備有優異的機械性質之外，又進行可連續式溶液刮刀塗佈製程來製備低成本的可撓式電子元件，因此近年來有機高分子元件儼然成為一大研究熱門領域，然而，卻鮮少人研究共軛高分子半導體在溶液塗佈過程中，塗佈的參數與方式會對於電晶體元件特性與機械特性之影響，因此本研究使用電子予體受體高分子來作為有機薄膜電晶體的半導體層，我們利用溶液剪切(solution shearing)塗佈製程技術來塗佈高分子半導體層，並探討不同基板介面改質與塗佈速度等參數，對於薄膜電晶體電荷遷移率(charge carrier mobility)、表面形貌、分子結晶排列之作用，也利用偏光UV-Vis光譜來計算分色光比(dichroic ratio)來判斷高分子順向性排列的基準，我們也發現在溶液剪切速度提升時，結晶排列距離與電荷遷移率都會有所改變。從本研究中，發現溶液製程條件可以有效幫助高分子順向性排列，也對於元件電氣有顯著影響，期望此研究可以給予相關光電產業在高分子溶液製程上有所啟發。

關鍵字

溶液剪切製程 ； 有機場效應電晶體 ； 軟性電子

並列摘要

In the next generation of electronic devices, donor-acceptor conjugated polymer materials are considered as a promising material candidate for an active layer of electronic devices. This is because organic materials have high charge transport capability, great mechanical tolerance and solution processability. The solution processability allows the polymer semiconductor to fabricate large-area and low cost devices continuously. However, it is rarely reported how the process parameters affect device performance and mechanical properties. In this study, poly(diketopyrrolo[3,4-c] pyrrole-co thieno [3,2-b]thiophene) (PDBT-co-TT) was employed as a semiconductor layer of organic thin film transistors. We employed solution shearing for the fabrication of polymer-based thin film transistors. We investigated the influence of process parameters of solution shearing on the charge carrier mobility, morphology, crystalline structure and mechanical properties. In this study, we demonstrate the effects of solution shearing on the charge transport, polymer anisotropy. This work provides fundamental understanding on the polymer alignment and charge transport under solution processing.

並列關鍵字

solution shearing process ； Organic field-effct transistors ； flexible electronics