- 期刊
電漿輔助原子級氣相沉積技術介紹
Introduction of plasma enhanced atomic layer deposition technique
摘要
原子級氣相沉積是一種可以提供精準控制成長均勻厚度與組成成分的薄膜成長技術，所使用原子級的成長原理是藉由在兩個反應半循環中表面的自我限制吸附現象所完成，其中電漿輔助原子級氣相沉積技術與熱反應式原子級氣相沉積技術在前驅物使用效率、奈米微結構與薄膜成分調整、同步電漿表面處理、與低溫製程有極大的優勢而在半導體與相關產業廣泛的被使用。本文會詳細的介紹電漿輔助原子級氣相沉積技術的原理與此技術的優勢，並針對目前產業界所使用原子級氣相沉積技術的應用逐一詳細說明。
並列摘要
Atomic layer deposition (ALD) is a thin film growth technique which allowed precisely control of the film thickness and uniformity. The deposition of the atomic level ultra-thin film is achieved by two half reaction cycles which has a self-limiting surface adsorption process. Compared to thermal ALD, plasma enhanced atomic layer deposition (PEALD) has the advantage on better precursor utilization rate, tunable structure and versatile composition of target material, in-situ surface modulation by plasma treatment, and availability to room temperature deposition condition. In this article, we will describe the deposition principles of ALD and the advantage of PEALD in detail.
延伸閱讀
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