具臨場焦耳加熱之原子層沉積系統

Atomic Layer Deposition System with in-situ Joule Heating Capability

林雨樵(Y. C. Lin) ； 柯志忠(C. C. Kei) ； 余友軒(Y. S. Yu) ； 楊承燁(C. Y. Yang)

《真空科技》 32卷2期 (2019/06) Pp. 18-22

摘要

本文將介紹針對在合金線材且形狀彎曲複雜表面鍍膜所設計之臨場焦耳加熱原子層沉積（in-situ Joule heating ALD）系統，包括腔體設計概念及焦耳加熱模組。以外接式電源供應器透過電引入模組以焦耳加熱之方式將合金線材加熱，在輸出電壓／電流約為2.75V/0.23A時，鎳鈦合金線材之溫度約會上升至200℃。適用於表面積大、散熱效果強之樣品以及ALD成長溫度較高之薄膜製程。

關鍵字

焦耳加熱 ； 原子層沉積

並列摘要

The in-situ Joule heating atomic layer deposition system was utilized for alloy wire samples with a complex shape. A particular chamber and Joule heating module were designed for this system. The electrical power, which supported by ex-situ power supply, was introduce by feedthroughs. As the output voltage/current was 2.75V/0.23A, the temperature of NiTi alloy wire samples would be raised to about 200℃. This system is suitable for samples with strong heat dissipation due to its large surface area or films have to be deposited at higher process temperature.

並列關鍵字

Joule heating ； Atomic layer deposition