成長晶圓尺寸之單晶單層二維材料技術

The Growth of Wafer-Scale Single-Crystalline 2D Monolayer Materials

黃子紜(Tzu-Yun Huang) ； 蔡孟霖(Meng-Lin Tsai)

《真空科技》 33卷4期 (2020/12) Pp. 7-14

摘要

世人追求電子產品方便攜帶、功能豐富，然而相同大小的積體電路中可容納的電晶體數量有限，促使技術研發不斷演進。近年來二維材料由於其在單層及多層之差異、特殊的激子行為、高透光性、可調控之載子遷移率及可撓等特性，在半導體元件製程等領域上蓬勃發展。然而，如何成長大尺寸單晶二維材料，將是未來能否實際應用於半導體相關元件的重要關鍵。本文介紹石墨烯、六方氮化硼以及二硫化鉬如何利用化學氣相沉積，使用基板選擇、金屬濺鍍、熱處理等技巧，順利合成大面積晶圓尺寸之材料，並透過光學影像或低能量電子繞射去證實為單晶單層的二維材料。

關鍵字

二維材料 ； 半導體 ； 化學氣相沉積 ； 晶圓尺寸 ； 單晶

並列摘要

The demand of portable electronic devices with multiple function has promoted the improvement of semiconductor technologies in order to increase the number of transistors in a dense integrated circuit. Two-dimensional (2D) materials have been widely developed in the field of semiconductor device fabrication due to their difference between monolayers and multilayers, intriguing excitonic behaviors, tunable carrier mobilities, and flexible properties. However, the growth of large-scale single crystal 2D materials has become a major challenge that should be overcome to achieve further practical applications. This article aims to introduce the recent reports of substrate selection, metal sputtering, and heat treatment methods that have been performed to achieve wafer-scale single crystal 2D materials including graphene, boron nitride, and molybdenum disulfide. In addition, characterization techniques such as optical microscopy and low-energy electron diffraction have also been introduced to further verify the crystal quality of the as-grown monolayer 2D materials.

並列關鍵字

2D materials ； semiconductors ； chemical vapor deposition ； wafer-scale ； single crystal