石英具有壓電性、絕緣性、透光性、高硬度、熱穩定性高等特性,是一種極具發展為元件潛力之材料。在石英材料上發展微奈米機電系統技術,最大困難在於加工困難度與非導電性所導致之電荷累積效應。本研究使用導電樹酯Espacer300作為導電層,消除石英在電子束曝光時產生之電荷累積效應。在電子束微影完成後,以金屬蒸鍍、lift-off技術,配合反應性離子乾蝕刻技術,製作出具備奈米線寬圖形之石英母模,而後於母模上進行脫模層表面處理後,進行光固化型奈米壓印,完成圖形之轉移。在電子束微影方面,本研究成功地完成100奈米線寬之圖形;在lift-off技術方面,完成200奈米線寬之金屬擋罩製作;在母模及壓印方面,完成500奈米線寬之母模及圖形轉移。
Quartz has the potential to be developed as a device due to its material properties including piezoelectricity, isolation, transparency, high hardness and high thermal stability. The major obstacle to MEMS and NEMS developing techniques on quartz is the machining difficulty and the charging problem resulting from isolation in the e-beam exposure process. This research utilizes the conducting polymer Espacer 300 as a conducting layer to dissipate the charging effect. After E-beam lithography, the quartz mold is fabricated by metal evaporation, lift-off, and a reactive ion etch. Afterwards, the surface of the quartz mold is treated by dodecyltrichlorosilane in toluene. Photo-solidification NIL is accomplished using the surface-treated mold and photo cross-linked polymer mr-L 6000.3Xpe. This research has successfully defined l00nm-width resist features and 200nm-width metal mask. Features of 500nm are resolved on the mode and transferred to the polymer after imprinting.