運用不同種類量子井的極寬頻半導體光放大器與波長可調雷射

Extremely Broadband Semiconductor Optical Amplifiers/Tunable Semiconductor Lasers Using Nonidentical Multiple Quantum Wells

蘇益信(Yi-Shin Su) ； 黃啟嘉(Chi-Chia Huang) ； 林清富(Ching-Fuh Lin)

《科儀新知》 151期 (2006/04) Pp. 6-16

https://doi.org/10.29662/IT.200604.0001

摘要

因為光纖在1300nm到1600nm之間有相當低的訊號傳輸損耗，因此可以提供極寬的光通訊頻寬，然而一般光通訊用的光放大器或可調波長雷射能提供的頻寬有限。本文將介紹運用不同種類量子井於同一元件，可使半導體光放大器提供將近300nm (1300nm-1600nm)的增益頻寬，將此半導體光放大器運用於半導體雷射共振腔中，能讓半導體雷射可以有275nm的波長可調範圍，或是可以同時產生間距達200nm的雙波長半導體雷射，或同時產生八波長而相鄰波長間距達20nm的多波長半導體雷射。

並列摘要

Optical fibers exhibit very low loss for the wavelength between 1300 nm and 1600 nm, so they provide a very large bandwidth for fiber-optic communications. However, the optical amplifiers or tunable lasers used in the fiber-optic communication systems have limited bandwidth. This article will introduce the use of nonidentical multiple quantum wells in a single device to achieve the purpose of very broad bandwidth. With nonidentical multiple quantum wells, the semiconductor optical amplifiers could provide nearly 300 nm of the gain bandwidth. Using such a semiconductor optical amplifier in the semiconductor-laser cavity, the semiconductor laser could have the single-wavelength operation with its wavelength tunable from 1300 nm to 1575 nm, or dual-wavelength operation with spectral spacing tunable from a few nm up to near 200 nm, or simultaneous operation at 8 wavelengths with neighboring wavelength separated for about 20 nm.