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新型半導體全氟化物廢氣電漿處理技術

New Plasma Treatment for Semiconductor Waste PFC Gases

摘要


2005年2月16日正式生效的京都議定書(Kyoto Protocol)主要管制六種溫室氣體(CO2, CH4, N2O, HFCs, PFCs, SF6)的排放,其中列入管制名單之全氣化物(perfluorocompounds, PFCs)是一人造的、極穩定很難裂解去除的強效溫室效應氣體,常見於半導體製程及鋁製程產業之排氣中。現今半導體廠採用的尾氣處理裝置普遍對PFCs之去除效果不彰,因而一新而有效之PFCs尾氣處理機台需求是可預期的,且為未來一大商機。這篇文章主要說明利用電漿火炬產生之高溫電漿進行對半導體全氟碳化物氣體直接裂解的破壞與去除實驗成果,對2F6及CF4等常見之全氣化物去除效率均能達到99.9%,副產物主要為CO2與HF。目前此技術已技轉給國內廠商,並與其合作組裝成一完整半導體尾氣局部洗滌機台,也通過工業技術研究院環安中心檢驗認證。

關鍵字

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並列摘要


Kyoto Protocol, which regulates and limits mainly the emission of six kinds of greenhouse gases (CO2, CH4, N2O, HFCs, PFCs, and SF6), came into effect on February 16, 2005 officially. Among these regulated greenhouse gases perfluorocompounds (PFCs), which were used commonly in aluminium and semiconductor manufacturing industries, are the artificial, most stable and effective greenhouse gases and are difficult to remove. Traditional tail gas abatement equipments of PFCs used by semiconductor factory were less effective, so a new and efficient removal equipment of PFCs is very anticipated and holds a great business opportunity in the future. In this paper a thermal plasma torch technique is introduced, high temperature plasma is generated and utilized to destruct PFCs of semiconductor waste gas directly, and the efficiency of abatement can be up to 99.9% for C2F6 and CF4, and the byproducts were mainly CO2 and HF which can be easily handled. Currently this technology had obtained patent and been transferred, a plasma local scrubber based on this had been assembled and evaluated in various semiconductor plants. For quality assurance, this equipment also had passed the test of PFC removal verification performed by the center of environment and safety of ITRI.

並列關鍵字

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被引用紀錄


張敬嚴(2009)。利用沸石及金屬有機架構物觸媒催化及吸附全氟化物之研發〔碩士論文,元智大學〕。華藝線上圖書館。https://doi.org/10.6838/YZU.2009.00338

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