原子層沉積系統原理及其應用

The Principles and Applications of Atomic Layer Deposition

章詠湟(Yung-Huang Chang) ； 陳智(Chih Chen) ； 彭智龍(Chih-Lung Peng)

《科儀新知》 159期 (2007/08) Pp. 33-43

https://doi.org/10.29662/IT.200708.0004

摘要

最近原子層沉積(ALD)吸引著許多的注意，原因在於它傑出的沉積技術能力，例如幾乎100%的階梯覆蓋、精準的薄膜厚度控制、大面積薄膜的均勻性、優異的製程穩定度與低溫的製程。這些傑出的能力可歸功於跟傳統鍍膜技術不一樣的飽和化學吸附與自我限制的鍍膜機制。這篇文章將詳細介紹製程原理、儀器設備與半導體工業上的應用。

並列摘要

Atomic layer deposition (ALD) has attracted a lot of attention recently for its excellent deposition abilities, such as almost 100% step coverage, accurate thickness control, large area uniformity, excellent process stability, and low processing temperatures. These excellent abilities can be contributed to the mechanism of saturated chemi-sorption and self-limiting film deposition, which differs from traditional deposition technology. In this report, the growth mechanisms of ALD, instrumentation, and applications are described in details.