原子層沉積在軟性光電元件之應用

Applications of Atomic Layer Deposition on Flexible Electronics

蔡豐羽(Feng-Yu Tsai)

《科儀新知》 159期 (2007/08) Pp. 44-49

https://doi.org/10.29662/IT.200708.0005

摘要

軟性光電元件需要能有效阻隔水氣與氣氣的封裝薄膜，而ALD之零缺陷、低溫成膜以及100%立體包覆率使其成為最有希望解決軟性電子元件封裝需求的成膜方法。先前研究已臉證了ALD A12O3薄膜在26nm即可達到軟性光電元件對水氣與氣氣阻隔率的要求，且該ALD A12O3薄膜可反覆彎曲至2cm曲率半徑而阻氣效能不變。ALD A12O3薄膜對OLED元件的封裝亦較其他薄膜封裝方法有級數上的改善。軟性光電應用所需之ALD機台較現有機台有其特殊之處，但其設計單純，值得我國廠商投入研發。

並列摘要

Flexible electronics call for thin barrier/encapsulation films that can effectively prevent ambient H2O and O2 from getting contact with their organic active materials. Because of its unique advantages of low defect density, low deposition temperature, and 100% conformality, ALD presents the most promising solution among all current thin film deposition techniques for the encapsulation of flexible electronics. Previous studies have demonstrated that ALD A12O3 films at 26-nm thickness yielded barrier performance on par with flexible electronics' requirements, and the films' barrier performance did not change upon repeated flexing to a curvature of 2-cm radius. Thin-film encapsulation of OLED using ALD also showed orders-of-magnitude improvements over the state-of-the-art thin-film encapsulation processes. In terms ALD equipments, the flexible electronics applications call for designs that are different from those of the current off-the-shelf tools but that are likely simpler in many aspects, making the development of specialized ALD tools an ideal arena for Taiwanese equipment manufacturers.